SI23-Series SOT-23 SMD Mosfet Transistors
SOT-23 SMD Mosfet Transistor P-Channel N-Channel
The SI2302 is a commonly used N-Channel Enhancement Mode MOSFET designed for low voltage switching applications. It comes in a compact SOT-23 surface-mount (SMD) package, making it suitable for compact PCBs and high-density circuits. It is known for its low gate threshold voltage, low on-resistance (R<sub>DS(on)</sub>), and high-speed switching performance.
Key Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V<sub>DS</sub>) | 20V |
| Gate-Source Voltage (V<sub>GS</sub>) | ±8V |
| Drain Current (I<sub>D</sub>) | 2.8A (continuous) |
| Pulsed Drain Current | 10A (maximum) |
| R<sub>DS(on)</sub> (max) | 85mΩ @ V<sub>GS</sub> = 2.5V |
| 42mΩ @ V<sub>GS</sub> = 4.5V | |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 0.6V to 1.0V |
| Total Gate Charge (Q<sub>g</sub>) | ~4nC (typical) |
| Power Dissipation | 1.25W (at T<sub>A</sub> = 25°C) |
| Package | SOT-23 (3-pin) |
SOT-23 SMD Mosfet Transistor P-Channel N-Channel
The SI2302 is a commonly used N-Channel Enhancement Mode MOSFET designed for low voltage switching applications. It comes in a compact SOT-23 surface-mount (SMD) package, making it suitable for compact PCBs and high-density circuits. It is known for its low gate threshold voltage, low on-resistance (R<sub>DS(on)</sub>), and high-speed switching performance.
Key Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V<sub>DS</sub>) | 20V |
| Gate-Source Voltage (V<sub>GS</sub>) | ±8V |
| Drain Current (I<sub>D</sub>) | 2.8A (continuous) |
| Pulsed Drain Current | 10A (maximum) |
| R<sub>DS(on)</sub> (max) | 85mΩ @ V<sub>GS</sub> = 2.5V |
| 42mΩ @ V<sub>GS</sub> = 4.5V | |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 0.6V to 1.0V |
| Total Gate Charge (Q<sub>g</sub>) | ~4nC (typical) |
| Power Dissipation | 1.25W (at T<sub>A</sub> = 25°C) |
| Package | SOT-23 (3-pin) |
Original: $0.06
-67%$0.06
$0.02Description
SOT-23 SMD Mosfet Transistor P-Channel N-Channel
The SI2302 is a commonly used N-Channel Enhancement Mode MOSFET designed for low voltage switching applications. It comes in a compact SOT-23 surface-mount (SMD) package, making it suitable for compact PCBs and high-density circuits. It is known for its low gate threshold voltage, low on-resistance (R<sub>DS(on)</sub>), and high-speed switching performance.
Key Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V<sub>DS</sub>) | 20V |
| Gate-Source Voltage (V<sub>GS</sub>) | ±8V |
| Drain Current (I<sub>D</sub>) | 2.8A (continuous) |
| Pulsed Drain Current | 10A (maximum) |
| R<sub>DS(on)</sub> (max) | 85mΩ @ V<sub>GS</sub> = 2.5V |
| 42mΩ @ V<sub>GS</sub> = 4.5V | |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 0.6V to 1.0V |
| Total Gate Charge (Q<sub>g</sub>) | ~4nC (typical) |
| Power Dissipation | 1.25W (at T<sub>A</sub> = 25°C) |
| Package | SOT-23 (3-pin) |
